IXFK90N30 Datasheet - IXYS Corporation

IXFK90N30, Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM .

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IXFK90N30_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFK90N30

Manufacturer:

IXYS Corporation

File Size:

125.63 KB

Description:

Power MOSFET

Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

Applications

* l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l © 2001 IXYS All rights reserved 98537A (12/0

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IXFK90N30 Power MOSFET IXYS Corporation

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