Part number:
IXFK90N30
Manufacturer:
IXYS Corporation
File Size:
125.63 KB
Description:
Power mosfet.
Datasheet Details
Part number:
IXFK90N30
Manufacturer:
IXYS Corporation
File Size:
125.63 KB
Description:
Power mosfet.
IXFK90N30, Power MOSFET
HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 300 300 ± 20 ± 30 90 75 360 90 64 3 5 560 -55 +150 150 -55 +1
IXFK90N30 Features
* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
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