Datasheet4U Logo Datasheet4U.com

IXFK90N30 Datasheet - IXYS Corporation

IXFK90N30 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 300 300 ± 20 ± 30 90 75 360 90 64 3 5 560 -55 +150 150 -55 +1.

IXFK90N30 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXFK90N30_IXYSCorporation.pdf

Preview of IXFK90N30 PDF
IXFK90N30 Datasheet Preview Page 2 IXFK90N30 Datasheet Preview Page 3

Datasheet Details

Part number:

IXFK90N30

Manufacturer:

IXYS Corporation

File Size:

125.63 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFK90N20 HiPerFET Power MOSFETs (IXYS Corporation)

IXFK90N20Q Power MOSFET (IXYS Corporation)

IXFK90N60X Power MOSFET (IXYS)

IXFK90N60X N-Channel MOSFET (INCHANGE)

IXFK94N50P2 Power MOSFET (IXYS Corporation)

IXFK100N10 Power MOSFET (IXYS Corporation)

IXFK100N25 Power MOSFET (IXYS Corporation)

IXFK100N65X2 Power MOSFET (IXYS)

TAGS

IXFK90N30 IXFK90N30 Power MOSFET IXYS Corporation

IXFK90N30 Distributor