IXFM35N30 Datasheet - IXYS Corporation

IXFM35N30 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30 IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 V DSS 300 V 300 V 300 V I D25 35 A 40 A 40 A R DS(on) 100 mW 85 mW 88 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt P D TJ TJM Tstg TL Md Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC.

IXFM35N30 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Applications

IXFM35N30 Datasheet (670.14 KB)