IXFP180N10T2 - Power MOSFET
TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS,TJ
IXFP180N10T2 Features
* International Standard Packages
* 175°C Operating Temperature
* High Current Handling Capability
* Fast Intrinsic Rectifier
* Dynamic dV/dt Rated
* Low R DS(on) Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* Synchronous Rectif
