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Advance Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3
VDSS ID25
RDS(on)
= 600V = 22A ≤ 360mΩ
TO-220AB (IXFP)
G
DS
Tab
TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 22 55 11 400 35 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g g G D S G D
S Tab
TO-247 (IXFH)
Tab D = Drain Tab = Drain
G = Gate S = Source Features
z z z z
1.
IXFQ22N60P3 Datasheet
