IXGH22N50BU1S, IXGH22N50BU1 Datasheet - IXYS Corporation

IXGH22N50BU1S HiPerFAST IGBT

Preliminary data HiP erF AST HiPerF erFAST with Diode Combi P ac k Pac ack TM IGBT IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S VCES IC(25) VCE(sat)typ tfi(typ) TO-247 SMD = 500 V = 44 A = 2.1 V = 55 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 500 500 ±20 ±30 44 22 88 .

IXGH22N50BU1S Features

* International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD

* High frequency IGBT and antiparallel FRED in one package

* High current handling capability

* HiPerFASTTM HDMOSTM process

* MOS Gate turn-on - drive simplicity Applicati

IXGH22N50BU1_IXYSCorporation.pdf