IXGH24N170 Datasheet - IXYS Corporation

IXGH24N170 - High Voltage IGBT

High Voltage IGBT Advance Technical Information IXGH24N170 IXGT24N170 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 50A 3.3V 250ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load VGE = 15V, TVJ = 125°C, VCE = 1000V RG = 5Ω, non repetitive TC = 25°C 1.6mm (0.062 in.) fro.

IXGH24N170 Features

* z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed contro

IXGH24N170_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXGH24N170

Manufacturer:

IXYS Corporation

File Size:

124.22 KB

Description:

High voltage igbt.

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IXGH24N170 High Voltage IGBT IXYS Corporation