IXGH24N50B Datasheet - IXYS Corporation

IXGH24N50B HiPerFAST IGBT

HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES 500 V 600 V I C(25) 48 A 48 A VCE(sat) 2.3 V 2.5 V tfi 80 ns 80 ns Preliminary data www.DataSheet4U.com Symbol Test Conditions 24N50 Maximum Ratings 24N60 600 600 ±20 ±30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 +150 150 -55 +150 300 1.13/10 6 V V V V A A A A W °C °C °C °C Nm/lb.in. g TO-247 AD VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = .

IXGH24N50B Features

* International standard packages JEDEC TO-247 AD

* High frequency IGBT

* High current handling capability

* 3rd generation HDMOSTM process

* MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md W

IXGH24N50B_IXYSCorporation.pdf