IXGH24N60AU1S, IXGH24N60AU1 Datasheet - IXYS Corporation

IXGH24N60AU1S HiPerFAST IGBT

HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.com V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 .

IXGH24N60AU1S Features

* International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft reco

IXGH24N60AU1_IXYSCorporation.pdf