IXGH24N60BU1 Datasheet - IXYS Corporation

IXGH24N60BU1, HiPerFAST IGBT

HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol www.DataSheet4U.com Test Conditions TJ = 2.

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IXGH24N60BU1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXGH24N60BU1

Manufacturer:

IXYS Corporation

File Size:

170.14 KB

Description:

HiPerFAST IGBT

Features

* G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB) VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD
* High frequency IGBT and antiparallel
* High current handling capability
* 3rd generation HDMOSTM process
* MOS Gate turn-on -

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 2.3 V V µA mA nA V
* AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies

IXGH24N60BU1 Distributors

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IXGH24N60BU1 HiPerFAST IGBT IXYS Corporation

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