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IXGH24N60AU1 Datasheet - IXYS Corporation

IXGH24N60AU1 - HiPerFAST IGBT

HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.com V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55

IXGH24N60AU1 Features

* International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft reco

IXGH24N60AU1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXGH24N60AU1

Manufacturer:

IXYS Corporation

File Size:

116.66 KB

Description:

Hiperfast igbt.

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IXGH24N60AU1S IXGH24N60A IXGH24N60B IXGH24N60BU1 IXGH24N60C IXGH24N60CD1

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IXGH24N60AU1 HiPerFAST IGBT IXYS Corporation