IXGT60N60 - Ultra-Low VCE(sat) IGBT
Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 @ 0.8 VCES 300 -55 +150 150 -55
IXGT60N60 Features
* International standard package JEDEC TO-247 AD, TO-264, TO-268
* New generation HDMOSTM process
* Low VCE(sat) for minimum on-state conduction losses
* High current handling capability
* MOS Gate turn-on drive simplicity Applications
* AC motor speed
