IXGT60N60C3D1, IXGH60N60C3D1 Datasheet - IXYS

IXGT60N60C3D1 High Speed PT IGBT

GenX3TM 600V IGBTs IXGH60N60C3D1 with Diode IXGT60N60C3D1 Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = V ≤ CE(sat) tfi (typ) = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C, (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, T.

IXGT60N60C3D1 Features

* z Optimized for Low Switching Losses z Square RBSOA z High Avalanche Capability z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z

IXGH60N60C3D1-IXYS.pdf