IXGT72N60A3 Datasheet, IGBT, IXYS Corporation

IXGT72N60A3 Features

• Igbt z z z Optimized for low conduction losses Square RBSOA International standard packages Advantages z z High power density Low gate drive requirement Applications Symbol Test Conditi

PDF File Details

Part number:

IXGT72N60A3

Manufacturer:

IXYS Corporation

File Size:

258.88kb

Download:

📄 Datasheet

Description:

Genx3 600v igbt.

IXGT72N60A3 Application

• Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE =

TAGS

IXGT72N60A3

IXYS Corporation

📁 Related Datasheet

IXGT72N60B3 - GenX3 B3-Class IGBTs (IXYS Corporation)
.DataSheet.co.kr GenX3TM B3-Class IGBTs Medium Speed low Vsat PT IGBTs 5-40 kHz Switching IXGH72N60B3 IXGT72N60B3 VCES IC110 VCE(sat) tfi(typ) .

IXGT10N170 - High Voltage IGBT (IXYS)
High Voltage IGBT IXGH10N170 IXGT10N170 VCES = IC90 = VCE(sat) ≤ 1700V 10A 4.0V TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSO.

IXGT10N170A - High Voltage IGBT (IXYS)
High Voltage IGBT Preliminary Data Sheet IXGH 10N170A IXGT 10N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 10 A = 6.0 V = 35 ns Symbol Test Condit.

IXGT15N120B - HiPerFAST IGBT (IXYS Corporation)
HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE(sat) = 3.2 V tfi(typ) = 160 ns .. Symbol VCGR VGES VGEM I.

IXGT15N120B2D1 - IGBT (IXYS)
Advance Technical Information HiPerFASTTM IGBT IXGH15N120B2D1 IXGT15N120B2D1 Optimized for 10-20 KHz hard switching and up to 100 KHz resonant switch.

IXGT15N120BD1 - Low VCE(sat) IGBT (IXYS Corporation)
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V .

IXGT15N120C - IGBT Lightspeed Series (IXYS Corporation)
IGBT Lightspeed Series Preliminary data Symbol .. VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = .

IXGT15N120CD1 - Low VCE(sat) IGBT (IXYS Corporation)
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V .

IXGT16N170 - High Voltage IGBT (IXYS Corporation)
Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE(sat) tfi(typ) = 1700 V = 32 A = 3.5 V = 290 ns .. .

IXGT16N170A - High Voltage IGBT (IXYS Corporation)
High Voltage IGBT w/ Sonic Diode IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 VCES IC90 VCE(sat) tfi(typ) = 1700V = 11A £ 5.0V = 35ns Symb.