IXGT72N60A3, IXGH72N60A3 Datasheet - IXYS Corporation

IXGT72N60A3 - GenX3 600V IGBT

www.DataSheet.co.kr GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH72N60A3 IXGT72N60A3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-247 (IXGH) V V V V A A A A G TO-268 (IXGT) G C E 600V 72A 1.35V 250ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped indu

IXGT72N60A3 Features

* z z z Optimized for low conduction losses Square RBSOA International standard packages Advantages z z High power density Low gate drive requirement Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE =

IXGH72N60A3_IXYSCorporation.pdf