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IXSR40N60BD1 IGBT

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Description

Advanced Technical Information IGBT with Diode ISOPLUS 247TM Short Circuit SOA Capability IXSR 40N60BD1 (Electrically Isolated Backside) VCES IC25.

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Features

* DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity G = Gate, E = Emitter C = Collector, G C ISOPLUS 247TM E 153432 E Isolated backside

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 150°C 7 650 5 ±100 2.2 V V mA mA nA V Advantages
* Easy assembly
* High power density
* Very fast switching speeds for high frequency applications 98672 (0

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