IXSA20N60B2D1 Datasheet - IXYS Corporation

IXSA20N60B2D1 High Speed IGBT

High Speed IGBT IXSA 20N60B2D1 IXSP 20N60B2D1 Short Circuit SOA Capability Preliminary Data Sheet VCES = 600 V IC25 = 35 A VCE(sat) = 2.5 V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VCGlaEm= p1e5dVi,nTdJu=ct1iv2e5°loCa,dRG = 82Ω tSC (SCSOA) PC TJ TJM Tstg Weight VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Maximum l.

IXSA20N60B2D1 Features

* International standard packages

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast fall time for switching speeds up to 20 kHz

IXSA20N60B2D1 Datasheet (169.98 KB)