IXSX50N60AU1S, IXSX50N60AU1 Datasheet - IXYS Corporation

IXSX50N60AU1S IGBT

www.DataSheet4U.com Preliminary data IGBT with Diode Combi Pack Short Circuit SOA Capability VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE(sat) = 2.7 V TO-247 Hole-less SMD (50N60AU1S) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150 °C; RGE = 1 MΩ Continuous Transient TC = 25° C, limited by leads TC = 90° C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, R G = 22 Ω Clamped inductive load, L = 30 .

IXSX50N60AU1S Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l Hole-less TO-247 package for clip mounting High current rating Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package Low V CE(sat) - for minimum on-state conduction

IXSX50N60AU1_IXYSCorporation.pdf