Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 85 110 5.5 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 85 V 85 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC =
IXTC200N085T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTC200N085T
Manufacturer:
IXYS Corporation
File Size:
138.38 KB
Description:
Power mosfet.