* S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier B Symbol Test Conditions O V
IXTM75N10
IXYS Corporation
1.11 MB
N-channel mosfet.
MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247.
📁 Related Datasheet
IXTM75N10 N-Channel MOSFET (INCHANGE)
IXTM10N100 MOSFET (IXYS Corporation)
IXTM11N80 N-Channel MOSFET (INCHANGE)
IXTM11N80 Power MOSFET (IXYS)
IXTM12N100 MOSFET (IXYS Corporation)
IXTM12N90 N-Channel MOSFET (INCHANGE)
IXTM13N80 Power MOSFET (IXYS)
IXTM15N60 N-Channel MOSFET (INCHANGE)
IXTM20N60 N-Channel MOSFET (IXYS)
IXTM20N60 N-Channel MOSFET (INCHANGE)
