IXTP50N085T Datasheet - IXYS Corporation

IXTP50N085T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP50N085T IXTY50N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 50 A 23 mΩ TO-220 (IXTP) GD S D (TAB) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt.

IXTP50N085T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and O

IXTP50N085T Datasheet (165.61 KB)