* g V V Ω r e .n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 +150 150 - 55 +150 ce. °C °C °C °C °C Nm/lb.in. Plastic overmolded tab for electrical isolation International standard package Avanlanche rated Low package inductance - easy to drive
IXTP7N60PM Datasheet (197.81 KB)
IXTP7N60PM
IXYS Corporation
197.81 KB
Power mosfet.
Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I.
📁 Related Datasheet
IXTP7N60P Power MOSFET (IXYS)
IXTP7N60P N-Channel MOSFET (INCHANGE)
IXTP7N60PM N-Channel MOSFET (INCHANGE)
IXTP70N075T2 Power MOSFET (IXYS)
IXTP70N075T2 N-Channel MOSFET (INCHANGE)
IXTP70N085T N-Channel MOSFET (INCHANGE)
IXTP70N085T Power MOSFET (IXYS Corporation)
IXTP75N10P N-Channel MOSFET (IXYS)
IXTP75N10P N-Channel MOSFET (INCHANGE)
IXTP76N075T N-Channel MOSFET (INCHANGE)
