DSEP30-03A Datasheet - IXYS

DSEP30-03A Epitaxial Diode

DSEP 30-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V 300 Type TO-247 AD DSEP 30-03A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 300 1.2 0.3 -55+175 175 -55+150.

DSEP30-03A Features

* International standard package

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour

* Epoxy meets UL 94V-0 Applications

* Antiparallel diode for high frequenc

DSEP30-03A_IXYS.pdf

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Datasheet Details

Part number:

DSEP30-03A

Manufacturer:

IXYS

File Size:

45.93 KB

Description:

Epitaxial diode.

DSEP30-03A Distributor

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DSEP30-03A DSEP30-03A Epitaxial Diode IXYS