* / Advantages:
* Planar passivated chips
* Very low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
DSEP30-12B Datasheet (138.95 KB)
DSEP30-12B
IXYS
138.95 KB
High performance fast recovery diode.
HiPerFRED
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
Part number
DSEP30-12B
3
1
DSEP30-12B
VRRM =
I FAV
=
t r.
📁 Related Datasheet
DSEP30-12A - High Performance Fast Recovery Diode
(IXYS)
HiPerFRED
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
Part number
DSEP30-12A
3
1
DSEP30-12A
VRRM =
I FAV
=
t r.
DSEP30-12CR - High Performance Dynamic Fast Recovery Diode
(IXYS Corporation)
DSEP30-12CR
HiPerDynFRED
High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode
Part number
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DSEP30-12C.
DSEP30-03A - Epitaxial Diode
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DSEP 30-03A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 30 A VRRM = 300 V trr = 30 ns
A C
VRSM V 300
VRRM V 300
Type
TO-247 AD
DSEP 3.
DSEP30-06A - High Performance Fast Recovery Diode
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HiPerFRED
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
Part number
DSEP30-06A
3
1
DSEP30-06A
VRRM =
I FAV
=
t r.
DSEP30-06B - High Performance Fast Recovery Diode
(IXYS)
HiPerFRED
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
Part number
DSEP30-06B
31
DSEP30-06B
VRRM I FAV t rr
= = =
.
DSEP30-06CR - Epitaxial Diode
(IXYS Corporation)
DSEP 30-06CR
HiPerDynFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Preliminary Data
VRSM V 600 VRRM V 600 DSEP 30-06.
DSEP12-12A - High Performance Fast Recovery Diode
(IXYS)
HiPerFRED
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
Part number
DSEP12-12A
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1
DSEP12-12A
VRRM = 1200 V
I FAV
.
DSEP12-12A - Ultrafast Rectifier
(INCHANGE)
Ultra fast Rectifier
FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring .
