* / Advantages:
* Planar passivated chips
* Very low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Soft reverse recovery for low EMI/RFI
* Low Irm reduces: - Power dissipation within the di
DSEP30-12CR Datasheet (128.88 KB)
DSEP30-12CR
IXYS Corporation
128.88 KB
High performance dynamic fast recovery diode.
DSEP30-12CR
HiPerDynFRED
High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode
Part number
1
3
DSEP30-12C.
📁 Related Datasheet
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(IXYS)
HiPerFRED
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
Part number
DSEP30-12A
3
1
DSEP30-12A
VRRM =
I FAV
=
t r.
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Part number
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DSEP30-12B
VRRM =
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=
t r.
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IFAV = 30 A VRRM = 300 V trr = 30 ns
A C
VRSM V 300
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DSEP 3.
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DSEP30-06B
VRRM I FAV t rr
= = =
.
DSEP30-06CR - Epitaxial Diode
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HiPerDynFREDTM Epitaxial Diode
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DSEP12-12A
VRRM = 1200 V
I FAV
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DSEP12-12A - Ultrafast Rectifier
(INCHANGE)
Ultra fast Rectifier
FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring .
