DSEP30-06CR - Epitaxial Diode
DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) Preliminary Data VRSM V 600 VRRM V 600 DSEP 30-06CR Type A C IFAV = 30 A VRRM = 600 V trr = 20 ns ISOPLUS 247TM C A Isolated back surface A = Anode, C = Cathode Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 135°C; rectangular, d = 0.5 tP < 10 µs; rep.
rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine
DSEP30-06CR Features
* q TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 250 2500 20120 6 q q q q q Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (
