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DSEP30-06CR Datasheet - IXYS Corporation

DSEP30-06CR Epitaxial Diode

DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) Preliminary Data VRSM V 600 VRRM V 600 DSEP 30-06CR Type A C IFAV = 30 A VRRM = 600 V trr = 20 ns ISOPLUS 247TM C A Isolated back surface A = Anode, C = Cathode Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 135°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine .

DSEP30-06CR Features

* q TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 250 2500 20120 6 q q q q q Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (

DSEP30-06CR_IXYSCorporation.pdf

Preview of DSEP30-06CR PDF

Datasheet Details

Part number:

DSEP30-06CR

Manufacturer:

IXYS Corporation

File Size:

21.92 KB

Description:

Epitaxial diode.

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DSEP30-06CR DSEP30-06CR Epitaxial Diode IXYS Corporation

DSEP30-06CR Distributor