IXFE73N30Q Datasheet - IXYS

IXFE73N30Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFE 73N30Q VDSS = ID25 = = RDS(on) 300 V 66 A 46 mΩ trr ≤ 250 ns Preliminary data sheet Symbol VDSS VDGR E V GS VGSM T ID25 IDM IAR E EAR EAS dv/dt L PD T J O T JM T stg VISOL S M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note1 TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω T.

IXFE73N30Q Features

* Conforms to SOT-227B outline

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifier Applications

* DC-DC converters

* Battery

IXFE73N30Q-IXYS.pdf

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Datasheet Details

Part number:

IXFE73N30Q

Manufacturer:

IXYS

File Size:

586.95 KB

Description:

Power mosfet.

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