* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifier Applications
* DC-DC converters
* Battery
IXFE73N30Q Datasheet (586.95 KB)
IXFE73N30Q
IXYS
586.95 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFE 73N30Q
VDSS =
ID25 = = RDS(on)
300 V 66 A 46 m.
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