* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifier Applications
* DC-DC converters Mounting t
IXFE34N100 Datasheet (455.93 KB)
IXFE34N100
IXYS Corporation
455.93 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d.
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