IXFE34N100 Power MOSFET

IXYS Corporation

Description

www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d.

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Datasheet Specifications

Part number: IXFE34N100
Manufacturer: IXYS Corporation
File Size: 455.93 KB
Datasheet: IXFE34N100_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance

Applications

* DC-DC converters Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 19 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, I

IXFE34N100 Distributors

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IXFE34N100 Power MOSFET IXYS Corporation

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