IXFE34N100 Datasheet - IXYS Corporation

IXFE34N100 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 VDSS ID25 RDS(on) 0.24 Ω 0.2.

IXFE34N100 Features

* Conforms to SOT-227B outline

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifier Applications

* DC-DC converters Mounting t

IXFE34N100_IXYSCorporation.pdf

IXFE34N100 Datasheet Preview — Preview of IXFE34N100 PDF

Datasheet Details

Part number:

IXFE34N100

Manufacturer:

IXYS Corporation

File Size:

455.93 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFE36N100 Power MOSFET (IXYS Corporation)

IXFE180N10 Power MOSFET (IXYS Corporation)

IXFE23N100 Single MOSFET (IXYS Corporation)

IXFE24N100 Single MOSFET (IXYS Corporation)

IXFE44N60 Power MOSFET (IXYS Corporation)

IXFE50N50 Power MOSFET (IXYS Corporation)

IXFE55N50 Power MOSFET (IXYS Corporation)

IXFE73N30Q Power MOSFET (IXYS)

TAGS

IXFE34N100 IXFE34N100 Power MOSFET IXYS Corporation

IXFE34N100 Distributor