IXFE34N100 Datasheet - IXYS Corporation

IXFE34N100 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 VDSS ID25 RDS(on) 0.24 Ω 0.2.

IXFE34N100 Features

* Conforms to SOT-227B outline

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifier Applications

* DC-DC converters Mounting t

IXFE34N100 Datasheet (455.93 KB)

IXFE34N100 Datasheet Preview — Preview of IXFE34N100 PDF

Datasheet Details

Part number:

IXFE34N100

Manufacturer:

IXYS Corporation

File Size:

455.93 KB

Description:

Power mosfet.

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IXFE34N100 Power MOSFET IXYS Corporation

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