IXFE23N100 Datasheet - IXYS Corporation

IXFE23N100, Single MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d.

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IXFE23N100_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFE23N100

Manufacturer:

IXYS Corporation

File Size:

454.36 KB

Description:

Single MOSFET

Features

* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance

Applications

* DC-DC converters Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 19 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, I

IXFE23N100 Distributors

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IXFE23N100 Single MOSFET IXYS Corporation

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