IXFE50N50 Datasheet (IXYS Corporation)

IXFE50N50, Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet VDSS IXFE 55N50 IXFE 50N50 ID25 RDS(on) 80 mΩ 100 mΩ 500 V 52 A 500 V 47 A trr ≤ 250 ns ISOPLUS 227TM (IXFE) Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°

IXFE50N50 Features

* Low cost direct-copper bonded aluminium package

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* 2500V isolation

* Low drain to case capacitance

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unc