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IXFE36N100, IXFE34N100 Datasheet - IXYS Corporation

IXFE36N100 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 VDSS ID25 RDS(on) 0.24 Ω 0.2.

IXFE36N100 Features

* Conforms to SOT-227B outline

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifier Applications

* DC-DC converters Mounting t

IXFE34N100_IXYSCorporation.pdf

IXFE36N100 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFE36N100, IXFE34N100. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFE36N100, IXFE34N100

Manufacturer:

IXYS Corporation

File Size:

455.93 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFE36N100, IXFE34N100.
Please refer to the document for exact specifications by model.

IXFE36N100 Distributor

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Stock and price

Microchip Technology Inc

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Unit Price : $18.56

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IXFE36N100 IXFE34N100 Power MOSFET IXYS Corporation