IXFE180N10 Datasheet - IXYS Corporation

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IXFE180N10 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR E.

IXFE180N10_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFE180N10

Manufacturer:

IXYS Corporation

File Size:

101.35 KB

Description:

Power MOSFET

Features

* Conforms to SOT-227B outline
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance Mounting

Applications

* DC-DC converters Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= ±20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = IT Note 2 Min. 100 2 Characteristic Values Typ. Max. V 4 ± 100 V nA µA mA mΩ

IXFE180N10 Distributors

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IXFE180N10 Power MOSFET IXYS Corporation

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