IXFE180N10 Datasheet - IXYS Corporation

IXFE180N10 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25 °C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C.

IXFE180N10 Features

* Conforms to SOT-227B outline

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance Mounting

IXFE180N10_IXYSCorporation.pdf

IXFE180N10 Datasheet Preview — Preview of IXFE180N10 PDF

Datasheet Details

Part number:

IXFE180N10

Manufacturer:

IXYS Corporation

File Size:

101.35 KB

Description:

Power mosfet.

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IXFE180N10 IXFE180N10 Power MOSFET IXYS Corporation

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