IXFH180N20X3, IXFT180N20X3HV Datasheet - IXYS

IXFH180N20X3 - Power MOSFET

Preliminary Technical Information X3-Class HiPerFETTM Power MOSFET IXFT180N20X3HV IXFH180N20X3 VDSS = ID25 =  RDS(on) 200V 180A 7.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT..HV) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,.

IXFH180N20X3 Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXFT180N20X3HV-IXYS.pdf