IXFH18N100Q3 Datasheet - IXYS Corporation

IXFH18N100Q3, Power MOSFET

www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif.

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IXFH18N100Q3_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH18N100Q3

Manufacturer:

IXYS Corporation

File Size:

188.59 KB

Description:

Power MOSFET

Features

* Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 300 260 1.13 / 10 4.0 6.0 Advantages z z Symbol Test Conditions (

Applications

* z z z 25 μA 1.25 mA 660 mΩ z z VGS = 10V, ID = 0.5
* ID25, Note 1 DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls © 2011 IXYS CORPORATION, All Rights Reserved DS100390(10/11) Datasheet pdf - http://www. DataSh

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IXFH18N100Q3 Power MOSFET IXYS Corporation

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