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IXFH18N100Q3 - Power MOSFET

IXYS Corporation

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Datasheet Details

Part number	IXFH18N100Q3
Manufacturer	IXYS Corporation
File Size	188.59 KB
Description	Power MOSFET
Datasheet	IXFH18N100Q3_IXYSCorporation.pdf

IXFH18N100Q3 Product details

Features

Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 300 260 1.13 / 10 4.0 6.0 Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max.

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Published: Feb 22, 2012 |