IXFH18N100Q3 Datasheet - IXYS Corporation

IXFH18N100Q3 Power MOSFET

www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT18N100Q3 IXFH18N100Q3 VDSS ID25 RDS(on) = 1000V = 18A ≤ 660mΩ TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g z z z z z Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 2.

IXFH18N100Q3 Features

* Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 300 260 1.13 / 10 4.0 6.0 Advantages z z Symbol Test Conditions (

IXFH18N100Q3_IXYSCorporation.pdf