IXFK170N20P Datasheet - IXYS

IXFK170N20P Power MOSFET

PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK170N20P IXFX170N20P VDSS = ID25 =  RDS(on) 200V 170A 14m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg L TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 170 A 1.

IXFK170N20P Features

* Dynamic dv/dt Rating

* Avalanche Rated

* Fast Intrinsic Diode

* Low QG

* Low R DS(on)

* Low Drain-to-Tab Capacitance

* Low Package Inductance Advantages

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode

IXFK170N20P Datasheet (129.05 KB)

IXFK170N20P Datasheet Preview — Preview of IXFK170N20P PDF

Datasheet Details

Part number:

IXFK170N20P

Manufacturer:

IXYS

File Size:

129.05 KB

Description:

Power mosfet.

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IXFK170N20P Power MOSFET IXYS

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