IXFK64N50P, IXFX64N50P Datasheet - IXYS

IXFK64N50P - Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFK 64N50P IXFX 64N50P VDSS ID25 RDS(on) trr = 500 V = 64 A ≤ 85 mΩ ≤ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC .

IXFK64N50P Features

* z z z G D S (TAB) D = Drain G = Gate S = Source PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain Tab = Drain Mounting torque (TO-264) TO-264 PLUS247 1.13/10 Nm/lb.in. 10 6 300 g g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s z Symbol Test Conditions (

IXFX64N50P_IXYS.pdf