IXFK64N50P - Power MOSFET
Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFK 64N50P IXFX 64N50P VDSS ID25 RDS(on) trr = 500 V = 64 A ≤ 85 mΩ ≤ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC .
IXFK64N50P Features
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G D S
(TAB) D = Drain
G = Gate S = Source
PLUS247 (IXFX)
(TAB)
G = Gate S = Source
D = Drain Tab = Drain
Mounting torque (TO-264) TO-264 PLUS247
1.13/10 Nm/lb.in. 10 6 300 g g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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Symbol Test Conditions (