IXFK64N60P Datasheet - IXYS

IXFK64N60P PolarHV HiPerFET Power MOSFET

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 64 A ≤ 96 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt .

IXFK64N60P Features

* z D = Drain Tab = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting force (PLUS247) Mounting torque (TO-264) TO-264 PLUS247 300 20..120/4.5..25 z z 1.13/10 Nm/lb.in. 10 6 g g z International standard packages Fast recovery diode Unclamped Inductive Swi

IXFK64N60P_IXYS.pdf