IXFK66N85X Datasheet - IXYS

IXFK66N85X Power MOSFET

X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK66N85X IXFX66N85X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 66 140 33 2.5 1250 50 -55 +150 150 -.

IXFK66N85X Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

* AC an

IXFK66N85X-IXYS.pdf

IXFK66N85X Datasheet Preview — Preview of IXFK66N85X PDF

Datasheet Details

Part number:

IXFK66N85X

Manufacturer:

IXYS

File Size:

377.72 KB

Description:

Power mosfet.

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IXFK66N85X IXFK66N85X Power MOSFET IXYS

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