Datasheet Details
Part number:
IXFK69N30P, IXFH69N30P
Manufacturer:
IXYS
File Size:
627.44 KB
Description:
Polarht hiperfet power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFK69N30P, IXFH69N30P.
Please refer to the document for exact specifications by model.
IXFK69N30P, IXFH69N30P, PolarHT HiPerFET Power MOSFET
PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°
IXFK69N30P Features
* z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb.in. 6 10 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Symbol Test Conditions (TJ = 25°C, unl
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