IXFK80N20 Datasheet - IXYS

IXFK80N20, Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VG.

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IXFK80N20_IXYS.pdf

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Datasheet Details

Part number:

IXFK80N20

Manufacturer:

IXYS

File Size:

123.89 KB

Description:

Power MOSFETs

Features

* International standard packages
* Molding epoxies meet UL 94 V-0 flammability classification
* Low RDS (on) HDMOSTM process
* Unclamped Inductive Switching (UIS) rated

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 35 30 V V nA mA mA mW mW
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode pow

IXFK80N20 Distributors

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IXFK80N20 Power MOSFETs IXYS

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