IXFK80N50Q3 Datasheet - IXYS

IXFK80N50Q3 - Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK80N50Q3 IXFX80N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 80 240 80 5 50 1250 -55 +150 15.

IXFK80N50Q3 Features

* Low Intrinsic Gate Resistance

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode and Resonant-Mode Power Su

IXFK80N50Q3-IXYS.pdf