IXFK88N30P - PolarHT HiPerFET Power MOSFET
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet IXFH 88N30P IXFK 88N30P VDSS ID25 www.DataSheet4U.com RDS(on) trr = 300 V = 88 A = 40 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, .
IXFK88N30P Features
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1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264
300
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1.13/10 Nm/lb.in. 6 10 g g
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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Symbol Test Conditions (TJ = 25°C, unless o