IXFM10N90, IXFH12N50 Datasheet - IXYS

IXFM10N90 Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 900 V I D25 10 A 12 A 13 A trr £ 250 ns R DS(on) 1.1 W 0.9 W 0.8 W Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS VDGR V GS VGSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM,.

IXFM10N90 Features

* l International standard packages l Low R HDMOSTM process DS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXFH12N50_IXYSCorporation.pdf