IXFP8N85XM Datasheet - IXYS

IXFP8N85XM - Power MOSFET

X-Class HiPERFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP8N85XM D G S VDSS = ID25 =  RDS(on) 850V 8A 850m OVERMOLDED TO-220 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Solde.

IXFP8N85XM Features

* International Standard Package

* Plastic Overmolded Tab

* High Voltage Package

* Low RDS(ON) and QG

* Avalanche Rated

* 2500V~ Electrical Isolation

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Sw