IXFP90N20X3M Datasheet - IXYS

IXFP90N20X3M - Power MOSFET

Preliminary Technical Information X3-Class HiPerFETTM Power MOSFET (Electrically Isolated Tab) IXFP90N20X3M VDSS = ID25 =  RDS(on) 200V 90A 12.8m N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25.

IXFP90N20X3M Features

* International Standard Package

* Plastic Overmolded Tab

* Low RDS(ON) and QG

* Avalanche Rated

* 2500V~ Electrical Isolation

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode

IXFP90N20X3M-IXYS.pdf