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IXFX230N20T GigaMOS Power MOSFET

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Description

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK230N20.

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Datasheet Specifications

Part number
IXFX230N20T
Manufacturer
IXYS
File Size
162.98 KB
Datasheet
IXFX230N20T_IXYS.pdf
Description
GigaMOS Power MOSFET

Features

* z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z

Applications

* z z 50 µA 3 mA 7.5 mΩ Synchronous Recification DC-DC Converters z Battery Chargers z Switched-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS100133(03/

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