IXGH32N170A Datasheet - IXYS

IXGH32N170A High Voltage IGBT

High Voltage IGBT IXGH 32N170A IXGT 32N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 32 21 110 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 2.

IXGH32N170A Features

* z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed contro

IXGH32N170A-IXYS.pdf