IXGH32N90B2, IXGT32N90B2 Datasheet - IXYS

IXGH32N90B2 High Speed IGBTs

Advance Technical Information IXGH 32N90B2 HiPerFAST IGBT B2-Class High Speed IGBTs IXGT 32N90B2 TM VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 900 V = 64 A = 2.7 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 900 900 .

IXGH32N90B2 Features

* z z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Weight Mounting torque (TO-247) TO-247 TO-268 1.13/10Nm/lb.in. 6 4 g g High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications z z Symbol Te

IXGT32N90B2_IXYS.pdf