* z z z z 1.13/10Nm/lb.in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 TJ = 25°C TJ = 125°C 2.7 1.8 V µA mA
IXGH30N60C2D1 Datasheet (184.96 KB)
IXGH30N60C2D1
IXYS
184.96 KB
Hiperfast igbt.
www.DataSheet4U.com
HiPerFAST with Diode
TM
IGBT
C2-Class High Speed IGBTs
IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ
= 600 V = 70.
📁 Related Datasheet
IXGH30N60C2 - HiPerFAST IGBT
(IXYS)
HiPerFAST
TM
IGBT
IXGH 30N60C2 IXGT 30N60C2
C2-Class High Speed IGBTs
VCES IC25 VCE(sat) tfi typ
..
= 600 V = 70 A = 2.7 V = 3.
IXGH30N60C3 - GenX3 600V IGBT
(IXYS Corporation)
GenX3TM 600V IGBTs
High-Speed PT IGBTs for 40-100kHz Switching
IXGA30N60C3 IXGP30N60C3* IXGH30N60C3
*Obsolete Part Number
Symbol
VCES VCGR VGES VGEM.
IXGH30N60C3C1 - High-Speed PT IGBT
(IXYS)
GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode
High-Speed PT IGBTs for 40 - 100kHz Switching
IXGA30N60C3C1* IXGP30N60C3C1
IXGH30N60C3C1
*Obsolete Part.
IXGH30N60 - Low VCE(sat) IGBT
(IXYS Corporation)
VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
.. Symbo.
IXGH30N60A - Low VCE(sat) IGBT
(IXYS Corporation)
VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
.. Symbo.
IXGH30N60B - HiPerFASTTM IGBT
(IXYS Corporation)
HiPerFASTTM IGBT
IXGH30N60B IXGT30N60B
VCES IC25 VCE(sat) tfi
= 600 V = 60 A = 1.8 V = 100 ns
..
Symbol VCES VCGR
Test Conditio.
IXGH30N60B2 - HiPerFAST IGBT
(IXYS Corporation)
..
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B.
IXGH30N60B2D1 - IGBT
(IXYS)
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B2D1 IXGT 30N60B2D1
V.
