IXGH30N60A Datasheet - IXYS Corporation

IXGH30N60A Low VCE(sat) IGBT

VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbol Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 600 600 ±20 ±30 50 30 100 ICM = 60 @ 0.8 VCES 200 -55 +150 150 -55 +150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) .

IXGH30N60A Features

* International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 µA,

IXGH30N60A_IXYSCorporation.pdf