IXGH30N60C3C1, IXGA30N60C3C1 Datasheet - IXYS

IXGH30N60C3C1 - High-Speed PT IGBT

GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode High-Speed PT IGBTs for 40 - 100kHz Switching IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Obsolete Part Number Symbol Test Conditions VCES VCGR VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IC25 IC110 IF110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10

IXGH30N60C3C1 Features

* Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts © 2011

IXGA30N60C3C1_IXYS.pdf