Part number:
IXGH30N60
Manufacturer:
IXYS Corporation
File Size:
82.71 KB
Description:
Low vce(sat) igbt.
IXGH30N60 Features
* International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 µA,
IXGH30N60 Datasheet (82.71 KB)
Datasheet Details
IXGH30N60
IXYS Corporation
82.71 KB
Low vce(sat) igbt.
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